Catalytic Effect of Ti or Pt in a Hexagonal Boron Nitride Surface for Capturing CO2

Large-area monolayer hexagonal boron nitride on Pt foil.

Hexagonal boron nitride (h-BN) has recently been in the spotlight due to its numerous applications including its being an ideal substrate for two-dimensional electronics, a tunneling material for vertical tunneling devices, and a growth template for heterostructures. However, to obtain a large area of h-BN film while maintaining uniform thickness is still challenging and has not been realized. ...

Hexagonal boron-nitride nanomesh magnets

Inter-layer potential for hexagonal boron nitride.

A new interlayer force-field for layered hexagonal boron nitride (h-BN) based structures is presented. The force-field contains three terms representing the interlayer attraction due to dispersive interactions, repulsion due to anisotropic overlaps of electron clouds, and monopolar electrostatic interactions. With appropriate parameterization, the potential is able to simultaneously capture wel...

Flexible Graphene Field-Effect Transistors Encapsulated in Hexagonal Boron Nitride.

Flexible graphene field-effect transistors (GFETs) are fabricated with graphene channels fully encapsulated in hexagonal boron nitride (hBN) implementing a self-aligned fabrication scheme. Flexible GFETs fabricated with channel lengths of 2 μm demonstrate exceptional room-temperature carrier mobility (μFE = 10 000 cm(2) V(-1) s(-1)), strong current saturation characteristics (peak output resist...

Defect-related photoluminescence of hexagonal boron nitride

Photoluminescence of polycrystalline hexagonal boron nitride (hBN) was measured by means of time-and energy-resolved spectroscopy methods. The observed bands are related to DAP transitions, impurities and structural defects. The excitation of samples by high-energy photons above 5.4 eV enables a phenomenon of photostimulated luminescence (PSL), which is due to distantly trapped CB electrons and...